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Information × Registration Number 0212U005019, 0111U005419 , R & D reports Title Elaboration of methods of receipt of protocrystal silicon layers on the basis of amorphous layers for the use in photovoltaic popup.stage_title Head Larkin Sergey, Registration Date 20-02-2012 Organization State scientific research centre "Fonon" popup.description2 A phenomenological model of generation, transfer and recombination of charge carriers in nanomodificated a-Si:H films with a small fraction of crystalline phase have been developed. Dependence of electric, photoelectric and optical properties of nanomodificated a-Si:H films with a small proportion of crystalline phase from proportion of crystalline phase has been determined experimentally. It was determined that by increasing proportion of crystalline phases in amorphous matrix, carriers stop moving in amorphous matrix and begin to move in silicon nanocrystals, herewith mechanisms of nonequilibrium charge carriers recombination also change. For samples with crystalline phase proportion 5-10% and 5-7 nm nanocrystals it have been tested several obtaining methods. The best results have been achieved by methods: 1) plasma-chemical decomposition of monosilane and hydrogen mixture, 2) layer plasma-chemical deposition, 3) laser crystallization of amorphous silicon, 4) metal-induced crystallization of amorphous silicon. Study of wafer material influence on the structure and properties of silicon protocrystal films has been conducted. It has been found that by using abovementioned methods (plasma-chemical decomposition of monosilane and hydrogen mixture and layer plasma-chemical deposition) it can be applied protocrystal silicon films with preset parameters practically on any wafers including fusible. Product Description popup.authors Воронько А.О. Глуховська Ю.Ю. Гуренко В.О. Кабанов О.В. Кубрак К.В. Ларкін Д.С. Ларкін С.Ю. Люблінська Е.О. Максакова Н.С. Новіков Є.І. Терещенко Ю.В. Федоова Л.Б. Шатернік В.Є. popup.nrat_date 2020-04-02 Close