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Information × Registration Number 0212U005690, 0111U005976 , R & D reports Title Development and optimization of effective methods of growing and enriching by the isotope of 82Se of ZnSe single crystals and processes of their surface chemical polishing for fabrication of operating elements of low-temperature scintillation bolometers. popup.stage_title Head Tomashik V. M., Доктор хімічних наук Registration Date 08-01-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 ABSTRACT Report of scientific research work: 116 p., 19 tabl., 53 fig., 10 applications, 49 sources. The objects of investigation are technological processes of synthesis and crystal growth of ZnSe and processes of their mechanical and chemical treatment. The purpose of work is to develop technological basis and to create a research production of zinc selenide crystals, which enriched isotope 82Se. Crystals will be used in the scintillation low-temperature bolometer at registration for neutrinoless double beta disintegration and also to develop and optimize etching compositions for chemical-mechanical and chemical-dynamic polishing in the formation of high quality surface of working elements substrates of devices. The method of research are to grow crystals from the melt and grows in a controlled gaseous medium, the method of rotating disk; the metallographic and profilometric analysis, the electron microscopy and atomic force microscopy; to research the optical parameters of the material, the low-temperature photoluminescence, test. A laboratory method of zinc selenide synthesis of elementary components Zn та 82Se was elaborated and the methods of crystal growth from the melt were improved; the annealing technique ZnSe in a controlled gaseous medium was developed to form the required structure of point defects; that determine scintillation characteristics; the optimal conditions of ZnSe bolometer heat treatment was defined to reduce level of residual internal stresses, to increase limit strength and the optical transmission of the crystal; the experimental samples of Zn82Se crystals were produced; the laboratory method of 82Se isotope separation from wastes of growing and mechanical treatment with the output at least95 %. According to dependencies "composition of etchant - the etching rate", results metallographic and profilometric analysis and research data of surface, the optical properties researching of it after various stages of mechanical and chemical treatments chemical treatment, the etchants compositions H2O2 - HBr - solvent and the effective methods and modes for chemical dynamic, chemical-mechanical and finishing polishing of undoped and doped ZnSe crystals by tellurium and aluminum were developed and optimized. The low-temperature PL spectra of crystals were received, the dependence of the intensity and the energy position of the bands in the spectra of type doping impurity and method of mechanical and chemical treatment of investigated materials was analyzed. The results of research were applied in technology of zinc selenide crystals growth, which are enriched with isotope 82Se, used in low-temperature scintillation bolometers during registration neutrinoless double beta decay. The expected suggestions for the development of object of study are search and development of optimal technology defect-free single crystals of zinc selenide. These crystal samples of Zn82Se will be used as working elements of the low scintillation bolometer, that work at Т= 15-25 К. SYNTHESIS, ZINC SELENIDE, CRYSTAL GROWTH, ANNEALING, SCINTILLATION BOLOMETER, SURFACE, CHEMICAL POLISHING, PROFILOMETRIC ANALYSIS, LOW TEMPERATURE PHOTOLUMINESCENCE. Product Description popup.authors Єрмаков В.М. Будзуляк С.І. Вахняк Н.Д. Воронкін Є.Ф. Галкін С.М. Демчина Л.А. Калитчук С.М. Капуш О.А. Корбутяк Д.В. Кравецький М.Ю. Кравцова А.С. Крюченко Ю.В. Купчак І.М. Лисецька О.К. Пащенко Г.А. Рибалка І.А. Стратійчук І.Б. Сукач А.В. Томашик З.Ф. Тріщук Л.І. popup.nrat_date 2020-04-02 Close