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Information × Registration Number 0213U000293, 0112U004099 , R & D reports Title The plasmons in the metastructures with active and gyrotropic layers: propagation, excitation and amplification. popup.stage_title Head Lytvynenko L.M., Registration Date 30-01-2013 Organization Institute of Radio Astronomy of Academy of Sciences of Ukraine popup.description2 Methods of solving problems of electromagnetic wave scattering by periodic layered structures and new algorithms to research fields in periodic structures with active and nonlinear inclusions have been developed. It has been justified that usage of trapped-mode resonance excitation regimes has great potentials in enhancement of surface plasmon-polaritons. First shown is the presence of a high-Q resonance with the antisymmetric field distribution in a periodic cell of fully dielectric lattice. Important for applications in the field of metamaterials the significant long-wave shift of the resonance compared to that in a single-element lattice is found For the first time polarization and frequency-selective properties of the double screen with coaxial-sectoral holes are investigated. Diffraction of waves on lattice of metal sockets with gyrotropic substrate is investigated and significant resonance enhance of Faraday polarization rotation is shown. The method is suggested and first performed is the research in multistubility and polarization instabilities of response in metalayers with high-Q resonances on trapped modes in the presence of inclusions in the form of layers characterized by a cubic nonlinearity. For the first time the analysis of the generation of the active layer radiation in three-dimensional layered photonic crystals with complex periodic cell depending on the gain of the active material is performed. A new periodic structure based on silicon which can maintain the trapped-mode resonance at a wavelength of 1550 nm is suggested. The quality factor Q of its resonances greatly exceeds that achievable in plasmon analogs. First shown is that hybridization of the active layer of semiconductor quantum dots with this structure make it possible to achieve a considerable, in one or two orders, enhancement of layer photoluminescence. Product Description popup.authors Грибовський Олександр Володимирович Младьонов Павло Леонідович Просвірнін Сергій Леонідович Сидорчук Наталія Віленовна Туз Володимир Ростиславович Хардіков В'ячеслав Володимирович popup.nrat_date 2020-04-02 Close