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Information × Registration Number 0213U001087, 0111U001019 , R & D reports Title The theory of carrying of current through a Schottky barrier on the basis of arsenide of indium - arsenide of gallium strained nanoheterosystems with quantum dots popup.stage_title Head Peleshchak Roman Mykhailovych, Доктор фізико-математичних наук Registration Date 16-01-2013 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 In the framework of the model of self-consistent electron-deformation connection the theory of formation of n-n+ transitions in structure of type metal - InAs/GaAs tense nanoheterosystem with the layer of InAs quantum dots of different form is created. Taking into account self-consistent electron-deformation connection, the regularities of a spatial distribution of electrostatic potential in Schottky barrier structure with the built-in layer of InAs quantum dots in area of a space charge of n-GaAs semiconductor matrix are investigated. Product Description popup.authors Даньків Олеся Омелянівна Козак Михайло Іванович Крипак Анаталій Олексійович Кузик Олег Васильович Німецький Володимир Петрович Пелещак Роман Михайлович Петрицина Оксана Євгенівна popup.nrat_date 2020-04-02 Close