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Registration Number

0213U001303, 0112U005189 , R & D reports

Title

Quantum Size Effects in semiconducting V2VI3 and IV-VI-based Thin Film and Bulk Structures and Control of their Thermoelectric Properties

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Head

Rogacheva Elena, Доктор фізико-математичних наук

Registration Date

08-02-2013

Organization

The Kharkov state polytechnical university

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The objects of the research are crystals and thin films of V2VI3 and IV-VI semiconductor compounds. The goal of the work is a technology development and growing Bi2Te3 and PbTe thin films with different stoichiometry and impurity concentration using thermal evaporation method in vacuum from one source, measuring their electrophysical and thermoelectrical parameters. The research methods are chemical composition analysis, X-ray diffractometry, measuring of conductivity, Hall coefficient, Seebeck coefficient. The crystals of Bi2Te3 and PbTe semiconductor compounds with different stoichiometry and impurity concentration were synthesized. The technology of growing Bi2Te3 semiconductor compound thin films with different deviation from stoichiometry on glass substrates using thermal evaporation method in vacuum from one source, PbTe thin films on BaF2 substrates, PbTe thin-films doping Cd, In, Ge, Bi, Sb, on KCl substrates was developed. The research of chemical composition, crystalline structure, measuring of electroconductivity, Hall coefficient, Seebeck coefficient was carried out. The influence of source material composition and substrate temperature on Bi2Te3 thin film kinetic properties was investigated. Research results have practical interest, as proposes technologically simple and cheap thin film growing method.

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Бондаренко Олександр Сергійович
Будник Олександр Валентинович
Водоріз Ольга Станіславівна
Дорошенко Ганна Миколаївна
Нащекіна Ольга Миколаївна
Ольховська Світлана Іванівна
Рогачова Олена Іванівна
Сіпатов Олександр Юрійович

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2020-04-02