Search academic texts

Information × Registration Number 0213U002002, 0111U000405 , R & D reports Title Development of high effeciency power amplifiers on the basis of schemes with harmonic manipulation popup.stage_title Head Vladimir G. Krizhanovski, Registration Date 03-01-2013 Organization Donetsk National University popup.description2 The transverse resonance technique for the analysis of the distributed discontinuity in a microstrip line ground plane in form of irregular slot resonators (rectangular, Pi-, H - and O-shaped) is modified. The developed algorithms allow to analyze structures taking into account an mutual coupling between serially connected discontinuities. The power amplifier inverse class F, on basis GaN the NPTB00004 transistor by the scheme with manipulation of harmonicas of an output signal on the basis of slot resonators is simulated, designed and experimentally investigated. The efficiency of the amplifier at a operating frequency 1,7 GHz made 60% at the output power of 3,9 W. The method of analytical calculation of an output circuit for class E amplifiers, which allows to expand a of frequencies band of resonant amplifiers is offered. Modeling of the amplifier with the output circuit calculated by this technique on FET CLY5, working with high efficiency in the range of frequencies of 800-900 MHz is carried out. The experimental research of the amplitude-phase conversion of the Doherty power amplifier on the basis of FET CLY5 is performed. The calculation procedure is developed and the experimental research of a class E amplifier modulator with efficiency not less than 80% for the RFID system is carried out. The effect of a phase noise reduction of the class E oscillator of the working in a mode of synchronization is experimentally confirmed. Product Description popup.authors Єфимович Андрій Павлович Макаров Денис Григорович Приліпська Ганна Сергіївна Рассохіна Юлія Валентинівна Чернов Дмитро Вікторович popup.nrat_date 2020-04-02 Close