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Information × Registration Number 0213U003401, 0110U002021 , R & D reports Title Оptoelectronic devices on the basis nanoporous compound A3B5 popup.stage_title Head Kidalov Valeryu, Доктор фізико-математичних наук Registration Date 04-02-2013 Organization Berdyansk State Pedagogical University popup.description2 The samples of porous GaAs were fabricated by an electrochemical method on n- and p- type GaAs. Low-frequency Raman shift of the peaks, conditioned by the main optical phonons, in the Raman spectra of the porous GaAs was observed. Estimations of the size of nanocrystals in a porous GaAs by results of a Raman spectroscopy, photoluminescences and scanning electron microscopy are in a good agreement within the limits of 5-10 nm. Product Description popup.authors Кідалов Валерій Віталійович Кирилаш Олександр Іванович popup.nrat_date 2020-04-02 Close