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Information × Registration Number 0213U005117, 0112U002844 , R & D reports Title Development of the technology for the obtaining of high-quality sapphire substrates for "silicon-on- sapphire" sapphire substrates for light diodes and other components of microelectronic devices.Creation of experimental industrial area for the manufacture of the substrates from the crystals grown by different methods for large integrated circuits, light diodes, etc. popup.stage_title Head Litvinov Leonid Arkadyevich, Registration Date 11-03-2013 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The technologies of the growth of bulk sapphire crystals with a weight of approximately 60 kg were modified. The technologies of the growth of sapphire plates with a width of 120 mm were updated, the corresponding samples were obtained, and the method for manufacture of high-quality substrates (50.80+-0.05)mm in diameter was developed. The required technological regulations were specified. The obtained results were brought into experimental production, experimental area for manufacture of the substrates from the crystals grown by different methods was created. Product Description popup.authors Андрєєв Євген Петрович Кривоносов Євген Воводтмтрович popup.nrat_date 2020-04-02 Close