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Information × Registration Number 0213U005140, 0112U002700 , R & D reports Title Orientational phenomena at scattering of charged particles by domain structures of magnetics and influence of point defects on the remagnetization of the latter popup.stage_title Head Bespalova Svetlana, Registration Date 20-03-2013 Organization Donetsk National University popup.description2 Aiming parameters for a point source of electrons resulting in such effects as entry blockage, surface channeling and multiple impacts with surface at scattering of a particles beam by thin magnetic films (SMF) with a regular stripe domain structure (SDS) or a hexagonal lattice of bubble domains have been determined. A relationship between the initial orientation of electrons in azimuthal plane and position of the particles source in respect to the domain structures, when the above effects should take place, has been established. Dependence of polar plane exit directions of the electrons approaching the SDS film on aiming parameters has been studied. A method for determining the potential of interaction of a domain boundary (DB) with defects, which size is small in respect to the DB thickness has been suggested. The equations describing the effect of diffuse rearrangement of sample defects subsystem on the processes of SMF magnetization have been obtained. It has been established that taking into account the defects diffusion results in the renormalization of stiffness constant in an equation defining the equilibrium form of the DB. The closed kinetic equation for distribution function of the DB in the SMF with low density of point defects has been obtained as well as an expression for the susceptibility of the SMF with point defects. Product Description popup.authors Афанасьєв Денис Миколайович Васильєв Олександр Васильович Васько Олена Ігорівна Фінохін Віктор Іванович Чернякова Ольга Володимирівна popup.nrat_date 2020-04-02 Close