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Information × Registration Number 0213U005350, 0111U001005 , R & D reports Title Low-temperature obtaining of silicon carbide films with preset properties meant for electronics and optoelectronics popup.stage_title Head Semenov Aleksandr Vladimirovich, Registration Date 22-04-2013 Organization Institute for Single Crystals National Academy of Sciences of Ukraine popup.description2 The onset of photovoltaic effect in the heterotransition which mechanism is much more complex in comparison with that of homogeneous transition, was investigated. Studied are the I-V parameters of the mesostructures of high-voltage SHF silicon pin diodes with protected surface under the influnce of moisture. The diode parameters (resistance, capacitance and breakdown voltage) were shown to be unchanged after the action of (95+-3)% humidity during 60 hours at 60 degrees Celsius. Product Description popup.authors Лопін Олександр Володимирович Пузіков Вячеслав Михайлович popup.nrat_date 2020-04-02 Close