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Information × Registration Number 0213U005537, 0110U005740 , R & D reports Title Development of basic physics of CVD process of nitrogen doped conductive nanocrystalline diamond materials synthesis popup.stage_title Head Strel'nitskij Vladimir Evgenievich, Доктор фізико-математичних наук Registration Date 18-06-2013 Organization National Science Center "Kharkiv Institute of Physics and Technology popup.description2 Research Report: 33 p., 14 fig., 1 tab., 13 references. Object of the research is a method of chemical vapor deposition of nanostructured diamond coatings doped with nitrogen. Purpose of this stage is to study the influence of the synthesis conditions of nitrogen doped nanocrystalline diamond films in a glow discharge plasma on their electrical conductivity. The method of investigation is an experimental study of the effect of synthesis conditions of nitrogen doped nanocrystalline diamond films in a glow discharge plasma on their conductivity and the relationship of the electrical conductivity change with the changes of the structural characteristics of diamond films with using the scanning electron microscopy and X-ray diffraction. The effect of temperature and composition of the gas phase consisting of methane, hydrogen, argon and nitrogen in a wide range of changes of their concentration on the specific resistance of nanostructured diamond films synthesized in a glow discharge plasma have been studied. It was shown that the dependence of the resistivity of nanostructured diamond films on the nitrogen concentration is monotonous. The sharp decrease of the resistivity is observed with increasing the concentration nitrogen in the gas phase to 6%-13% followed to the constant value at the nitrogen concentration of more than 25%-30%, regardless of changes in the concentration of other components of the gas phase. Such a dependence of the resistivity of nanostructured diamond films on the concentration of nitrogen coincides with the results of similar studies reported in the literature for nanostructured diamond films synthesized under very different conditions and by another methods. This may reflect the fact that such a feature of the resistivity dependence of nitrogen-doped diamond films on the nitrogen concentration in the gas phase is more general and fundamental. Dependence of resistivity of nitrogen doped nanostructured diamond films on the methane and argon concentration in the gas phase is more complex and is not monotonic with a minimum at certain values of the concentration of any one of these components. Temperature synthesis of nanostructured nitrogen-doped diamond films in the studied range of its changes from 1100 K to 1230 K significantly affects the value of it resistivity. With the increase in the synthesis temperature from 1100 K to 1230 K the resistivity of the films decreased by 2 orders of magnitude to a value of 1.1 ? 103 Ohm?cm with a tendency to further decrease with increasing temperature synthesis. It was established that between the value of coherent scattering region (CSR) of nitrogen-doped nanostructured diamond films and the changes of this magnitude is not observed relationship with changes and the resistivity of diamond films on their synthesis conditions. This indicates that the doping by nitrogen of nanostructured diamond films cause changes in the value of the resistivity primarily due to a change in the structure and composition of the diamond crystals boundaries. It is shown that the absolute values of the resistivity of nitrogen-doped nanostructured diamond films, in general, have a very complex dependence on the conditions of synthesis. Synthesis of nanostructured diamond films with the highest electrical conductivity requires the optimization of all parameters affecting its value. In this respect, reduce of the resistivity of the nitrogen doped nanostructured diamond films reached at this stage from 7x106 Ohm?cm to 4 x 101 Ohm?cm, i.e. more than five orders of magnitude, is not final, but only an evidence of a possible broader impact on this quantity the parameters of diamond films synthesis. Expected assumptions about the development of the object of research - development of the physical base of the nitrogen-doped conductive nanostructured diamond coatings synthesis. Product Description popup.authors Василенко Руслан Леонідович Воєводін Віктор Миколайович Грицина Василь Васильович Дудник Станіслав Федорович Кошевий Костянтин Іванович Луценко Валентин Дмітрович Опалев Олег Анатолійович Перепьолкін Сергій Степанович Решетняк Олена Миколаївна Стрельницький Володимир Євгенійович popup.nrat_date 2020-04-02 Close