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Information × Registration Number 0213U005889, 0112U003201 , R & D reports Title Development of technologies of light emitting nanocomposite materials SiO2:C for promisingsources of wahite light popup.stage_title Head Lysenko Volodymyr Sergiyovych, Registration Date 24-09-2013 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of study - white light-emitting materials based on nanostructured carbonated silicon oxide and / or alloy layers Si: O: C. Purpose - to research and develop a new type of white light-emitting materials based on nanostructured carbonated silicon oxide and / or alloy layers of Si: O: C, are considered as promising white light-emitting materials. Method study - photos and Electroluminescent spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, thermogravimetric studies, EPR studies ellipsometric measurements, X-ray photoelectron spectroscopy, scanning electron microscopy , atomic force microscopy , Auger spectroscopy, optical microscopy and optical profilometriya , Raman spectroscopy , electron energy loss spectroscopy , the method of current-voltage and capacitance-voltage harakterystyk.U framework of the project were developed economic laboratory technology of white light-emitting materials based on nanostructured alloy Si: O: C It has been proposed , developed and patented technology for the synthesis of composite nano- SiO2: C with strong white with Luminescence excitation source in the ultraviolet or blue spectral range. Product Description popup.authors І.М. Веровський Ігор Миколайович Іванов В.М. А.В. Васін Андрій Володимирович Гоменюк Юрий Вікторович Калабухова Катерина Миколаївна Ковтун С.І. Литвин Оксана Степанівна Назаров Олексій Миколайович Руденко Тамара Охрімівна Рудько Галина Юр'євна Русавський Андрій Вадимович Тертих В.А. Тягульський Ігор Петрович popup.nrat_date 2020-04-02 Close
R & D report
Head: Lysenko Volodymyr Sergiyovych. Development of technologies of light emitting nanocomposite materials SiO2:C for promisingsources of wahite light. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0213U005889
1 documents found

Updated: 2026-03-23