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Information × Registration Number 0214U000972, 0114U003987 , R & D reports Title Creation of modern technologies of structurally perfect GaAs popup.stage_title Head Oksanich Anatoly Petrovich, Registration Date 02-12-2014 Organization Kremenchuk Mykhaylo Ostrogradskiy State University popup.description2 The results of the study are improved method for determining the diameter ingot GaAs. The novelty of the method is the reduction of errors by taking into account excitatory factors influencing the determination of the diameter of the ingot. Scope. The method is recommended for use in enterprises of electronic industry, engaged in the production of ingots of single crystals of gallium arsenide. The work on the content and formal levels considered the problem of improving the method and apparatus of determining the diameter ingot of gallium arsenide in the process of growing. The mathematical model of the channel weighing GaAs ingot during its growing weight allowed improved method of measuring the diameter of the ingot by increasing the accuracy of measurement of weight by taking into account factors that affect the sensor weight. Model scheme obtained full-factorial experiment. Product Description popup.authors Андросюк Максим Андрійович Левінзон Давід Іделевіч Орел Володимир Іванович Притчин Сергій Емільович popup.nrat_date 2020-04-02 Close