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Information × Registration Number 0214U002250, 0112U003489 , R & D reports Title The electronic structure of silicon quantum dots in germanium popup.stage_title Head Yukhymchuk Volodymyr Olexandrovych, Доктор фізико-математичних наук Registration Date 27-01-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 During the project it was investigated processes of forming silicon quantum dots (QDs) embedded in a germanium matrix, the study of their properties and a comparison of SiGe quantum dots formed in a silicon matrix. It was established that the main features in the formation of Si nanoislands in Germanium are significant elemental intermixing and nucleation of dislocations at an earlier stage of growth than in the case of inverted Ge / Si, which imposes significant restrictions on the growth modes. We worked with structure of Si nanoislands formed on substrates of (100) and (111). Using Raman Spectroscopy and Local Auger Electron Spectroscopy, Atomic Force Spectroscopy, Tunneling and High Resolution Scanning Electron Microscopy and High Resolution X-ray diffraction allowed to fully characterize formed Si / Ge heterostructure. It is shown that the change in temperature epitaxy between 480 and 400 leads to increment of silicon content in the QDs from 58 to 78 at%. Using the method of finite element it was performed theoretical modeling of elastic strain field distribution in nanoislands and the surrounding layers of the matrix. In calculations were considered the real distribution of the elements in the islands and the matrix, which was identified by Local Auger Electron Spectroscopy. Product Description popup.authors Бабічук Іван Степанович Братусь Віктор Якович Валах Михайло Якович Грещук Олександр Михайлович Джаган Володимир Миколайович Пономарьов Семен Семенович Янчук Ігор Богданович Яремко Анатолій Михайлович popup.nrat_date 2020-04-02 Close