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Information × Registration Number 0214U005513, 0111U001019 , R & D reports Title The theory of carrying of current through a Schottky barrier on the basis of arsenide of indium - arsenide of gallium strained nanoheterosystems with quantum dots popup.stage_title Head Peleshchak Roman Mykhailovych, Доктор фізико-математичних наук Registration Date 23-01-2014 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The theory of the carrying of current in Schottky diodes of type metal - InAs/GaAs nanoheterosystem with InAs quantum dots, which self-consistent considers influence of contact phenomena on border the metal - the semiconductor and a quantum dot - a matrix, straining, quantum-dimensional and volume effects, is created. An electric characteristics are investigated and also the criteria of emergence of a S-shaped volt-ampere characteristic of Schottky diodes with InAs quantum dots is found. Product Description popup.authors Даньків Олеся Омелянівна Козак Михайло Іванович Крипак Анаталій Олексійович Кузик Олег Васильович Німецький Володимир Петрович Пелещак Роман Михайлович Петрицина Оксана Євгенівна popup.nrat_date 2020-04-02 Close