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Information × Registration Number 0214U006209, 0110U006288 , R & D reports Title Researrch and development of regular arrays of silicon nanowires in dielectric matrix and resonant-tunneling structures. popup.stage_title Head Evtukh Anatoliy Antonovych, Registration Date 18-02-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Objective of the step: to develop the technologies and research the physical processes during the growth of silicon nanowires in porous Al2O3 dielectric matrices and Si and develop the emission resonant - tunneling structures based on Si NW coated with nanocomposite SiO2 (Si) film. Detected selection of The semiconductor substrates underlying the process steps nanocrystal growth have been determined. It is shown that in one instance, the porous matrix of aluminum oxide on the semiconductor substrate allows to grow the silicon nanowire arrays of a predetermined size in certain places, and , as otherwise, the craters formed by nanoporous surface of the substrate define the controlled nucleation of metal - catalyst which causes the growth and is localized at predetermined locations of nanoporous substrate surface. As a result, a number of experiments Si NW ensembles with an average diameter of 200 nm have been obtained. To form the vertical crystals in the pores it is necessary to create the appropriate process growth conditions: ( 1) absence of defects on the vertical surface of pores, (2 preferential nucleation on the bottom of the pores, and (3 ) a relatively small pore depth, for preferential competitive growth of vertical nanowires. The experimental and theoretical studies of electron field emission from multilayer resonant - tunneling structure Si-SiO2 - Si-SiO2 based on Si have been carried out. Two different slopes on the experimental emission current - voltage characteristics, low slope at low electric fields and large slope at high electric fields have been revealed. The model describing the tunneling of electrons through the multilayer structure in electron field emission, which considers two ways of electron tunneling has been proposed. One way is the tunneling of electron from the states in the bulk material and the second way is the tunneling through the quantized subband of Si quantum dot in the multilayer coating . Under this model, two peaks in the energy distribution of emitted electrons have been obtained. This energy distribution of electrons gives rise of two different slopes on Fowler- Nordheim characteristics corresponding to two slopes, which are observed experimentally. Keywords : electron field emission, silicon nanowires, technology, gas-transport reactions, porous oxide matrix, the work function . Product Description popup.authors Євтух Анатолій Антонович Кизяк Анатолій Юрійович popup.nrat_date 2020-04-02 Close