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Information × Registration Number 0214U006353, 0113U000612 , R & D reports Title Influence of the ionization of impurity delta-layer inside quantum well on the binding energy of the same impurity. popup.stage_title Head Tulupenko Viktor M., Registration Date 11-03-2014 Organization Donbass State Engineering Academy popup.description2 The object of research is SiGe/Si quantum wells delta-doped with phosphorus in different places inside QW. The subject of research is the ground state of the impurity in the delta layer, the QW, as well as the structure of the quantum energy levels in the quantum well. Methods are self-consistent solution of Schr?dinger and Poisson equations and Green's function method to obtain the impurity binding energy. Results are new scientific knowledge about the potential impact of (partly) ionized impurity delta- layer, located within the quantum well , energy profile of the QW. Scientific novelty is the achievement of the fundamental ability to control the energy spectrum of devices (quantum well) with a small electric field. Applications are tunable emitters and photodetectors in THz energy range. Product Description popup.authors Акімов Володимир Ігорович Білих Валерій Георгійович Демедюк Роман Олександрович Тулупенко Віктор Миколайович Фоміна Оксана Сергіївна Черношкур Дмитро Іванович popup.nrat_date 2020-04-02 Close