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Information × Registration Number 0214U007514, 0112U003168 , R & D reports Title Development of technology for production of nanocrystalline silicon films based on amorphous Si-Sn-C and control methods and the pn-junction structure. popup.stage_title Head Yakimenko I. Yuri, Registration Date 27-10-2014 Organization Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI" popup.description2 The technological scheme of low-temperature synthesis of nanocrystalline silicon films from amorphous alloys. Method used thermal vacuum deposition in a stream of high-energy electrons. A model of the thin-film photovoltaic based nanocrystalline silicon (nc-Si) with three-dimensional distribution of potential barriers. The analysis of the quantitative criteria of structural and technological parameters (doping profile distribution, concentration gradient dopant, doping depth, the ratio of area of the region n and n+ - type conductivity). To achieve efficiency ratio above 24% is necessary to ensure the value of the embedded positive charge over 2,5·10-2 Кл/м2, the density of surface states at the insulator - semiconductor least 1015 ев-1м-2, the depth of the n+ - region of more than 3 mkm. Proposed and experimentally proven technological modes of formation of nanocrystals in the films of ?-Si:H. The method of IR spectroscopy established types of bonds in the films obtained Si-Sn-C, Si-О, Si-H, Si-H-N. The synthesized nanocrystalline silicon films based alloys. Established that increasing the substrate temperature during deposition of silicon alloy films ranging 130-280?С leads to an increase in conductivity. The maximum photosensitivity in the visible range of the spectrum (54 мА/лм*В) are films on substrates of single-crystal silicon p-type conductivity at 180°С. Heterostructures with well-defined diode characteristics, higher voltage value in fotoheneratornomu idling mode and maximum sensitivity to ultraviolet radiation at a wavelength of 350 nm. Conducted search and optimization of mode synthesis films by reactive RF magnetron sputtering. The method of increasing the photosensitivity of nanocrystalline silicon irradiated with ultraviolet semiconductor laser. Past studies photovoltaic properties of laboratory specimens heterostructures on silicon films. Product Description popup.authors Богдан Олександр Володимирович Богдан Тетяна Зіновіївна Зазерін Андрій Ігорович Зеленська Марина Олександрівна Зеленський Сергій Васильович Коваль Вікторія Михайлівна Лупина Борис Іванович Орлов Анатолій Тимофійович Пашкевич Геннадій Андрійович Пономарьова Тетяна Миколаївна Порєв Геннадій Володимирович Ульянова Вероніка Олександрівна Чугаєв Андрій Петрович popup.nrat_date 2020-04-02 Close