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Information × Registration Number 0214U008828, 0108U002445 , R & D reports Title Development and creation of diagnostic complex for testing of microwave diodes on the basis of wide-gap semiconductors. popup.stage_title Head Konakova Raisa Vasilevna, Registration Date 07-11-2014 Organization V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2 Scientific report consists of an introduction, one part and conclusions. The report has 34 pages of typescript, 22 pages of main text, 10 figures, 1 table, and a list of links of 40 items. The object of this work is the study of methods of diagnosing microwave diodes based on wide-gap semiconductors and thermal resistances of optoelectronic products. The aim is to develop diagnostic systems for the analysis of microwave Gunn diodes, pin and avalanche-transit diode and development of diagnostic tests for complex thermal resistance of power LEDs. The results of the developed, manufactured and tested in the experiment pin remote device that can diagnose korpusovani microwave diodes short millimeter wavelengths based on Si and GaAs, and switching microwave diodes based on p + -i-n + silicon carbide structures. Analysis of current-voltage characteristics of microwave diodes in the temperature range 77-700 K temperature allowed to determine mechanisms are characteristic parameters and microwave diodes. Keywords: Gunn, IMPATT diode, PIN diode Product Description popup.authors В.В. Шинкаренко В.М. Шеремет Р.В Конакова Я.Я. Кудрик popup.nrat_date 2020-04-02 Close