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Information × Registration Number 0214U008829, 0108U002445 , R & D reports Title Development and creation of diagnostic complex for testing of microwave diodes on the basis of wide-gap semiconductors. popup.stage_title Head Konakova Raisa Vasilevna, Registration Date 07-11-2014 Organization V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine popup.description2 Scientific report consists of an introduction, three parts and conclusions. The report has 86 pages of typescript, including 73 pages of main text, 42 illustrations, 2 tables and a list of links of 54 items. The object of this work is the study of methods of diagnosing microwave diodes based on wide-gap semiconductors. The aim is to develop and create complex diagnostic model of software test microwave diodes and predicting failures and methods of measurement and processing of the current-voltage characteristics of high-power microwave diode based on wide-gap semiconductors. A patent search on existing methods of diagnosis diodes Ghana on features pulse VAC. Based on the information received we propose a new method for diagnosis of microwave diodes based on wide-gap semiconductors. Tested output parameters and operating modes of equipment for rapid diagnosis Gunn diodes (voltage range 0-100 V, pulse width range 10-7-10-5 s, measurements in steady and pulsed modes). Keywords: Gunn, IMPATT diode, PIN diode Product Description popup.authors В.В. Шинкаренко В.М. Шеремет Р.В Конакова Я.Я. Кудрик popup.nrat_date 2020-04-02 Close