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Information × Registration Number 0214U008904, 0110U006288 , R & D reports Title Researrch and development of regular arrays of silicon nanowires in dielectric matrix and resonant-tunneling structures. popup.stage_title Head Evtukh Anatoliy Antonovych, Registration Date 10-12-2014 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Aim of the Project: The study of the physical processes occurring at the formation of Si nanowire, electron field emission from Si Nanowire on a flat surface and in the pores of the dielectric matrix, creating of the emission resonant tunneling structures and study of physical processes at electron emission in vacuum for emission nanoelectronics devices with a narrow energy distribution of electrons applications. As a result of this project the following results have been obtained: 1. Technology of silicon nanowires formation for effective field emission by electrochemical etching of silicon has been developed. It has been established that at the same time of the por-Si growth the emission properties of the structures are improved with the decrease in current density values to 1 mA / cm2. This is because at low current density at anodization the porosity of surface is lower, and there are larger nanocrystals at the surface that have good electrical contact with the substrate. 2. The technology of silicon nanowires growth by chemical deposition from the gas-vapor phase according to the vapor-liquid-crystal mechanism has been developed. The technological conditions of silicon nano-objects growth on semiconductor substrates have been determined. It was established that the silicon substrate with gold film thickness of d =4-5 nm at the duration of the growth time t = 5 min. the crystals with an average diameter of about 50 - 60 nm and the height of about 100 - 200 nm were precipitated. Extending the growing time in 2 times led to the appearance of crystals with larger diameter ~ 70 - 110 nm. 3. The technology of silicon nanowire formation induced by metal has been developed. It has been established that the etching of silicon in solution HF / AgNO3 for 5 min. caused the simple etched structures formation and within 30 min. the nanowhiskers were formed. 4. The technology of porous Al2O3 matrix formation by the electrochemical oxidation of aluminum has been developed. For reproducing obtaining of dielectric alumina matrix with small diameter and spread distance between pores the multistage process has to be used. 5. The technology of resonant tunneling structures SiO2-Si-SiO2 formation on Si nanowires and nanowhiskers based on the deposition of thin films of silicon-rich SiOx with followed thermal annealing, which causes their transformation in the structure of SiO2-Si-SiO2, has been developed. 6. The basic peculiarities of electron field emission from silicon nanowires and their emission parameters have been determined. 7. The basic laws of electron field emission from silicon nanowires with formed resonant tunneling structures have been determined. Two different slopes on experimental emission current-voltage characteristics and plots with negative differential resistance have been revealed. 8. The design and manufacturing techniques of acceleration sensor based on electron field emission from silicon nanotips have been developed. Due to the strong dependence of field emission current values on displacement and very low inertia of movable electrode the proposed sensors can be as the basis for the creation of supersensitive accelerometers based on registration of emission current changes as in the discrete performance and for creating of the accelerometers parts in the nanoelectromehanical systems. Product Description popup.authors Євтух Анатолій Антонович Кизяк Анатолій Юрійович popup.nrat_date 2020-04-02 Close