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Information × Registration Number 0215U000595, 0110U006262 , R & D reports Title Optical, electronical, and spin phenomena in the nanostructures of metallic, semiconductor, and organic nature. popup.stage_title Head Poroshin Volodymyr Mykolayovich, Registration Date 06-03-2015 Organization Institute of physics NASU popup.description2 The efficient organic field-effect transistor based on the nanostructures layer of the C60 semiconductor fullerene is proposed and implemented. The nature of the photo-transistor effect is studied which is manifested in the light-induced shift of the threshold transistor voltage toward the negative values. It is established that the photo-sensitivity appears only in the devices with top position of the gate, i.e., when the gate dielectric (parilene) was thermally deposited over the functional layer of C60, and it is caused by appearance of the free radicals in consequence of the spontaneous chemical reaction between the C60 molecules and the parilene monomers in the course of polymerization. It is shown that the monopolar nature of the charge transport in the photo-transistor based on the nanostructured fullerene C60 layer provides amplification of photoconduction by ~2700 which three times as high than in the silicon photodetectors and ten times as large as compared to the maximal value published so far for the organic photo-detectors. The obtained photo-detector sensitivity ~1000 A/W is three times as large in regard to the silicon detectors and is worse by parameters only in regard to the detectors based on the PbS quantum dots. The results form basis for implementation of the high-efficiency organic photo-detectors and optical memory cells. Product Description popup.authors Вахнін Олександр Юрійович Кадащук Андрій Костянтинович. Порошин Володимир Миколайович Фіщук Іван Іванович popup.nrat_date 2020-04-02 Close