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Information × Registration Number 0215U001273, 0113U000682 , R & D reports Title Multispectral photodetector for IR and THz ranges based on CdHgTe. popup.stage_title Head Sizov Fedir Fedorovych, Доктор фізико-математичних наук Registration Date 04-02-2015 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The aim of the project is to demonstrate the possibility of a multispectral detection of infrared and terahertz signal and prototyping multielement detector based on CdHgTe (MCT) to register THz and infrared radiation. During the project the processes of growth and alloying of strained HES of HgCdTe and QW of HgTe was conducted. The advantages of narrow-gap CdHgTe for THz detection were shown. The modelling of detector array with antennas on a dielectric substrate of finite size allowed to make requirements to the parameters of the substrate, ensuring uniformity of matrix elements. The technological router was created for multi-detector arrays based on MCT FPA. Special equipment was created for measuring THz and infrared sensitivity. Various implementations of multielement FPA detectors based on semiconductor hot electron bolometers (HEB) of CdHgTe were developed and tested. The estimated data for noise equivalent power show the availability of these designs. Bolometers based on thin MCT films with planar metal antennas were tested as direct detector of sub-THz radiation as well as infrared radiation in the range 3-10mkm. It has been demonstrated that it is possible to implement direct two-color infrared and sub-THz detector, which is able to operate without cooling or with moderate cooling. Product Description popup.authors Євменова Анна Зулхаірівна Вуйчик Микола В"ячеславович Голенков Олександр Геннадійович Гуменюк-Сичевська Жанна Віталіївна Лученко Анжеліка Илларіонівна Мележик Євген Олександрович Сахно Микола Вадимович Сизов Федір Федорович Цибрій Зиновія Федорівна popup.nrat_date 2020-04-02 Close
R & D report
Head: Sizov Fedir Fedorovych. Multispectral photodetector for IR and THz ranges based on CdHgTe.. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0215U001273
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Updated: 2026-03-26