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Information × Registration Number 0215U001484, 0110U006232 , R & D reports Title Investigation of ultra-high-frequency properties of semiconductor nanostructures with real-space-transfer of hot carriers which provide appearance of the negative differential conductivity (NDC), and amplification (generation) of electromagnetic radiation. popup.stage_title Head Poroshin Volodymyr Mykolayovich, Registration Date 03-03-2015 Organization Institute of physics NASU popup.description2 The usage of semiconductor structures with quantum wells and delta-doped barriers as well as quantum wells tunnel-coupled with the superlattice fragments has been proposed and justified with a view to obtain efficient real-space-transfer of charge carriers under the influence of applied lateral electric field. It is shown that the real-space-transfer of the charge carriers provides control of the static and UHF resistance up to achieving the negative differential conductivity. The conditions of amplification and generation of the UHF (sub-millimeter and terahertz) emission due to this effect have been defined, and calculations of optimal characteristics of the resonator have been carried out. The theoretical and experimental investigations of the charge carriers transport features under the electric and magnetic fields and conditions of the real space transfer have been carried out. The results are important for development of the generators and detectors for the UHF range. Product Description popup.authors Вайнберг Віктор Володимирович Коротєєв Вадим В'ячеславович Кочелап В'ячеслав Олександрович. Пилипчук Олександр Сергійович Порошин Володимир Миколайович Сарбей Олег Георгійович popup.nrat_date 2020-04-02 Close