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Information × Registration Number 0215U002544, 0115U002975 , R & D reports Title Investigation of non-equilibrium charge carriers and phonons in complex nanostructures based on the А3В5 semiconductor compounds. popup.stage_title Head Poroshin Volodymyr Mykolayovich, Registration Date 06-01-2016 Organization Institute of physics NASU popup.description2 The results of the study of the spatial distribution and drift length of nonequilibrium injected carriers in the n-InGaAs/GaAs heterostructure with different types of quantum wells in the lateral (directed in the plane of the wells) electric field presented. It is shown the explanation of anormally large drift length of carriers in selectively doped structures. Give the recommendations how to use this effect to create sources of the visible or near infrared radiation ( light emitting diode) large area. Product Description popup.authors Більвський Павло Антонович Вайнберг Віктор Володимирович Винославський Михайло Миколайович Гуденко Юлія Миколаївна Коротєєв Вадим Миколайович Кочелап Вячеслав Олександрович Пилипчук Олександр Сергійович Порошин Володимир Миколайович Трипачко Микола Олександрович Чорноморець Надія Федорівна popup.nrat_date 2020-04-02 Close
R & D report
Investigation of non-equilibrium charge carriers and phonons in complex nanostructures based on the А3В5 semiconductor compounds.
Head: Poroshin Volodymyr Mykolayovich. Investigation of non-equilibrium charge carriers and phonons in complex nanostructures based on the А3В5 semiconductor compounds.. (popup.stage: ). Institute of physics NASU. № 0215U002544
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Updated: 2026-03-24


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