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Information × Registration Number 0215U003763, 0113U000674 , R & D reports Title Development of technology for the synthesis of nanomaterials based on silicon compounds and rare earth metals Si: Y, Si: Eu thin-film photovoltaic cells. popup.stage_title Head Yakimenko I. Yuri, Registration Date 24-03-2015 Organization Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI" popup.description2 The technological scheme of the synthesis of nanomaterials based on silicon compounds and rare earth metals on the basis of thermal vacuum deposition in a stream of high-energy electrons. A model of the thin-film photovoltaic nanocrystalline silicon-based three-dimensional distribution of potential barriers and quantitative criteria first analyzed its structural and technological parameters (doping profile distribution and concentration gradient dopant, the doping depth, area ratio n and n+ - type conductivity ). Developed the basic principles and quantitative criteria structural and technological parameters (values built the positive charge in the insulator, the density of surface states at the insulator - semiconductor, electron-hole depth conversion of base doping regions and emittera) in combined photovoltaic-type inversion channel. Established nanomaterials synthesis technology based on silicon compounds and rare earth metals Si:Y, Si:Eu thin films for photovoltaic cells. Past studies properties of nanomaterials laboratory samples of films based on silicon compounds and rare earth metals and by their characteristics (electrical, optical and photosensitivity). It is shown that to achieve efficiency ratio above 24% is necessary to ensure the value of the embedded positive charge over 2,5·10-2 Кл/м2, the density of surface states on the insulator - semiconductor least 1015 ев-1м-2, the depth n+ - region more 3 microns. Proposed and experimentally tested technological modes of formation of nanocrystals in films ?-Si:H. The method of infrared spectroscopy established types of bonds in the films derived from compounds of silicon and rare earth metals Si:Y, Si:Eu. Elypsometrychni studies have shown that the value of the index of refraction varies in the range 3-1,5. When performing works by electron-beam evaporation were synthesized nanocrystalline silicon films based on preset alloys. The resulting films are of high conductivity, optical absorption in the region of 400 nm, and heterojunctions exhibit diode characteristics at low voltage 0,01-0,2V a direct connection. Product Description popup.authors Богдан Олександр Володимирович Богдан Тетяна Зіновіївна Зазерін Андрій Ігорович Зеленська Марина Олександрівна Зеленський Сергій Васильович Коваль Вікторія Михайлівна Лупина Борис Іванович Орлов Анатолій Тимофійович Пашкевич Геннадій Андрійович Пономарьова Тетяна Миколаївна Порєв Геннадій Володимирович Ульянова Вероніка Олександрівна Чугаєв Андрій Петрович popup.nrat_date 2020-04-02 Close