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Information × Registration Number 0215U004058, 0110U005698 , R & D reports Title Physical processes of radiation detection in teraherz/submilimeter range by field-effect transistors popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 30-01-2015 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The main advantage of the novel terahertz/sub-millimeter (THz/sub-mm) detectors based on nanoscale Si MOSFETs is possibility of its manufacturing in standard silicon technology together with VLSI (very-large-scale integration) circuits. It makes it possible to develop room-temperature THz/sub-mm multi-element detectors for real-time active vision systems. During the project time there were improved theoretical model of the detectors, developed (under 350 nm design rules) the samples as one element as 8-element liner array MOSFET detectors, and studied its properties. Each sensitive element consist of antenna that accumulated irradiation energy to the MOSFET. The typical antenna dimension is ~220 х 330 um2, dimensions of the transistors were from 0.35 х 0.5 um2 to 20 х 1 um2. At the frequency 71 GHz the volt-watt sensitivity was ~400 B/W, and decreases to ~80 V/W at the frequency 140 GHz. Noise equivalent power NEP was NEP ~ 500 pW/Hz1/2 (140 GHz). Design of the 8-element detector allows signal amplification and serial connection each element to the one output, control of coefficient amplification, and joining several liner arrays as one to increase horizontal image dimension (for example up to 320 elements). Maximum frequency of the horizontal scanning is 20 kHz and it is enough for real-time imaging. To find out promising semiconductor materials and heterostructures for THz/sub-mm detectors it was studied theoretical model of the quantum well CdTe/HgCdTe/CdTe with inversion band structure. At frequency 140 GHz with assist of the two dimensional mechanical scanning it was got the hidden to the paper envelope images of the objects. Product Description popup.authors Голенков Олександр Геннадійович Гуменюк-Сичевська Жана Віталівна Корінець Сергій Володимирович Рева Володимир Павлович Сизов Федір Федорович popup.nrat_date 2020-04-02 Close
R & D report
Head: Sizov F.F.. Physical processes of radiation detection in teraherz/submilimeter range by field-effect transistors. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0215U004058
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