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Information × Registration Number 0215U004311, 0114U003537 , R & D reports Title Formation methods development of the nanostructure objects on the II-VI semiconductor surfaces by the chemical etching and colloidal synthesis in the solutions, their introduction in solid state matrix and investigation of their optical and electrophysical properties. popup.stage_title Head Tomashik V. M., Доктор хімічних наук Registration Date 25-02-2015 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Report of scientific research work: 91 P., 42 fig., 5 tabl., 17 sources. The objects of research are nanocrystals (NC) of А2В6 and nanocompos are on their basis, technological processes of synthesis and modification of colloid solutions of NC CdTe; processes of radiation and absorption of electromagnetic radiation by the electronic subsystem of NC CdTe; lightradiative structures that contain clean or connected with antibodies colloid quantum points (QP) of CdSe and CdSeTe in the shell of ZnS are dried up on the hard lining; processes of forming of the nanostructured objects on the surface of single-crystals of CdTe and sosoloids of ZnхCd1-хTe methods of chemical digestion.The purpose is to development of effective methodologies of forming of the nanostructured objects on the surface of single-crystals of semiconductors of А2В6 by the methods of chemical digestion; colloid synthesis of nanosize semiconductor materials of А2В6 with a next incorporation in solid matrices and researches of lyte properties of the got nanocompos. The investigation methods are synthesis of colloid solutions of NC of semiconductors chemical besieging, optical and interference microscopy, spectroscopy of optical key-in, absorption, phptoluminescence (PL) and electricluminescence, combination dispersion of light, x-rayed diffraction and microstructure analyses.Anotation: Methodologies of receipt of NC CdTe are optimized in water solutions. Possibility of the use of such fundamentally new stabilizators of surface of NC CdTe is shown, as (NH2)2CS, hidroksiletilidenphosfonic and etilendiamintetraathetic acids. It is set that the sizes of NC CdTe and their variation in size change undroningly with the increase of duration of synthesis. It is shown that on the process of colloid synthesis of NC CdTe large influence carries out pH environments, and the change of viscidity of environment during the synthesis of NC CdTe allows to control firmness of the got solutions and intensity them PL. Methodology of receipt of polymeric structures is worked out from NC CdTe and CdSe, by passivation TGA acid (L- by a cystein), investigational them optical and luminescent properties. On the basis of QP CdTe the incorporated in a polymeric matrix is created lyteradiation structures and they are measured luminescent descriptions. Built and reasonable model of curent in the system that contains QP. Influence of parameters of lightradiative structures that contain byo-complex of "QP CdSe (Te) /ZnS - antibody" is set, and external treatments on kinetics of change of spectral position of stripe of PL QP. It is shown that the basic mechanism of spectral changes is oxidization of QP, that results in reduction to the diameter of their kernels. The mechanism of acceleration of process of oxidization is offered in the presence of byo-moleculs. Reverse dependence of size of spectral changes is educed on the concentration of antigens that tail to byo-complex. Methodology of making of lightradiative structure suitable for registration of byo-complex is worked out. Effective methodologies of forming of the nanostructured objects are worked out and optimized on the surface of semiconductors of А2В6. Product Description popup.authors Єрмаков В.М. Борковська Л.В. Будзуляк С.І. Вознюк Є.Ф. Демчина Л.В. Калитчук С.М. Капуш О.А. Корбутяк Д.В. Корсунська Н.О. Крюченко Ю.В. Курик А.О. Мазарчук І.О. Маланич Г.П. Морозовська В.Й. Палатний В.М. Стара Т.Р. Стратійчук І.Б. Томашик З.Ф. Тріщук Л.І. Щербина Л.В. popup.nrat_date 2020-04-02 Close
R & D report
Formation methods development of the nanostructure objects on the II-VI semiconductor surfaces by the chemical etching and colloidal synthesis in the solutions, their introduction in solid state matrix and investigation of their optical and electrophysical properties.
Head: Tomashik V. M.. Formation methods development of the nanostructure objects on the II-VI semiconductor surfaces by the chemical etching and colloidal synthesis in the solutions, their introduction in solid state matrix and investigation of their optical and electrophysical properties.. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0215U004311
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Updated: 2026-03-26


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