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Information × Registration Number 0215U004369, 0112U008358 , R & D reports Title Creation of semiconduktor layers on non mon oriented and developed surface substrates by vacuum-thermail evaporation and annealing popup.stage_title Head Baganov Yevgen Aleksandrovich, Registration Date 18-03-2015 Organization Kherson national technical university popup.description2 The mathematical model and computer algorithm, that allows to simulate nucleation processes on the surface of substrate were worked out. It gives the possibility to define surface density of grains as function of the annealing temperature. The two-dimensional mathematical model and computer algorithm that allows to simulate the grain shape during its growth were worked out. Simulating showed that after a certain grain size the formation of many defects takes place that makes worth electrophysical parameters of the deposited layer. It was shown that optimal annealing temperature is 400°С and grain size is 4 mkm. Product Description popup.authors Томілова Владислава Владиславівна popup.nrat_date 2020-04-02 Close