Search academic texts

Information × Registration Number 0215U004871, 0111U002512 , R & D reports Title Physical mechanism of influence of the deformation and relaxation processeson formation and properties of semiconductor nanostructures with complex crystal lattice popup.stage_title Head Kladko Vasyl Petrovych, Registration Date 11-12-2015 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Morhpological and srtustural properties of complex structures of hexagon syngony such as superlattices, nanowires (NW) and graded layers were investigated. For nanowires it was shown that their morhpological and srtustural properties strongly depends on formation of nanostructuring Si-N substrate at first stage of growth . Developed theoretical model gives possibility to obtain physical characteristics of NW from simullation of diffraction curves and reciprocal space map. Complex investigation of compositionally-graded heterostructures GaN/AlxGa1-xN using Х-ray diffractometry, atomic scanning microscopy, scanning probe microscopy, transmission electron microscopy and Rutherford reverse dispersion have discovered coherent growth of graded layer AlxGa1-xN at initial abrupt increase of alluminium concentration and further gradual increase to the defined concentration. Product Description popup.authors Єфремов О. О. Гончарова О.Г. Гудименко О. Й. Гурін А.В. Калашник Ю.Ю. Клімовська А.І. Корчовий А. А. Кравченко Н.Й. Кривий С. Б. Кучук А. В. Литвин О. С. Литвин П. М. Литвин Ю.М. Лобортас Л.Є. Мєшкова І.А. Мазін М.О. Максименко З. В. Поліщук Ю. О. Полудін В.І. Прокопенко І. В. Проскуренко Н.М. Рябченко Ю.О. Сафрюк Н. В. Слободян М. В. Стадник О. А. Станчу Г.В. Чернета Т.Г. popup.nrat_date 2020-04-02 Close