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Information × Registration Number 0215U006013, 0110U005740 , R & D reports Title Development of basic physics of CVD process of nitrogen doped conductive nanocrystalline diamond materials synthesis popup.stage_title Head Strel'nitskij Vladimir Evgenievich, Доктор фізико-математичних наук Registration Date 22-01-2015 Organization National Science Center "Kharkiv Institute of Physics and Technology popup.description2 Scientific report: 43 p., 20 fig., 6 table. 26 references. Object of research - properties of nanostructured diamond coatings doped by nitrogen and method of gas-phase chemical synthesis. Purpose - optimization of the process of diamond conductive nanostructured coatings doped by nitrogen synthesis and summarizing the results of research on the project. The method of research - experimental study of the effects of synthesis parameters of nanocrystalline diamond films deposition in the glow discharge plasma on their structure, electrical conductivity and other properties with the use of scanning electron microscopy, optical microscopy, X-ray diffraction, Raman spectroscopy, cyclic voltammetry, nanoindentation, scratch testing and so on. Based on the analysis and generalization of the experimental results it have been determined the main regularities in the kinetics of nanocrystalline diamond films growth, their structure and conductivity in dependence on the composition of the gas phase and the synthesis temperature in the DC glow discharge in crossed E/H fields. These results, taken together, constitute the physical basis for the development of technologies for production of nanostructured conductive diamond coatings of different functions. The study of electrochemical properties of nitrogen doped nanostructured diamond coatings showed the possibility of their use as electrodes for analytical instruments in determining low concentrations of organic and inorganic substances in water solutions and for other electrochemical equipment. Study of mechanical characteristics of nitrogen doped nanostructured coatings showed that they have high hardness values (from 39 to 64 GPa) depending on the conditions of their deposition and elastic modulus (from 241 to 359 GPa) and can combine a unique set of physical and mechanical properties of diamond material with electrical conductivity. Tests of samples from silicon carbide coated by nitrogen doped nanostructured coatings showed that their adhesive strength can be up to 43 N and the coefficient of friction can be within 0,22-0,25. Study of emission properties of some nanostructured nitrogen doped diamond coatings have found that their work function of electrons can be of 1.26 eV. This value corresponds to the best data of work function of electrons known in the literature for such coatings obtained by other methods of synthesis. The study of various properties and characteristics of nitrogen doped nanostructured diamond coatings obtained by the synthesis in the DC glow discharge in crossed E/H fields, showed that their characteristics are similar or coincide with the data given in the literature. At the same time, the technological process developed in this project is easier and cheaper when compared to the most common method of nitrogen doped nanostructured diamond coating synthesis in microwave plasma. Prognosis assumptions about the object of research - development processes and technologies for the synthesis of nitrogen doped conductive nanostructured diamond coatings of different functions. Product Description popup.authors Грицина Василь Іванович Дудник Станіслав Федорович Кошевий Костянтин Іванович Луценко Валентин Дмітрович Опалев Олег Анатолійович Решетняк Олена Миколаївна Стрельницький Володимир Євгенійович popup.nrat_date 2020-04-02 Close