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Information × Registration Number 0215U007675, 0113U001971 , R & D reports Title Development of a new rapid technology of preparation semiconductor nuclear radiation detectors and their production for nuclear experiments popup.stage_title Head Lytovchenko Petro Grygorovych, Registration Date 18-12-2015 Organization Institute For Nuclear Research Of National Academy Of Sciences Of Ukraine popup.description2 For the manufacture of semiconductor detectors of nuclear radiation with large volume of sensitive area the technology of more rapid drift of lithium ions and the efficient regimes of levelling drift for obtaining of highly compensated i-material in the p i n-structures were worked out. The drift of the lithium ions on the considerable depths in the silicon was optimized. The influence of the micro-defects and distribution of the oxygen in silicon on the mobility of lithium ions in the process of drift was investigated. The control measurements of the capacity-voltage characteristics of р і n-structures during the drift process of lithium ions were carried out. The dependence of the parameters of capacity-voltage characteristics from the existence of the deep impurity energy levels in the volume of silicon was shown. One-off technological regulation of the manufacturing process of Si(Li) planar type detectors with a thickness of the sensitive area of more than 3 mm was worked out. Product Description popup.authors Бердниченко С. В. Варніна В. І. Воробйов В. Г. Кібкало Т. І. Кочкін В. І. Ластовецький В. Ф. Макуха О. М. Полівцев Л. А. Старчик М. І. Тартачник В. П. popup.nrat_date 2020-04-02 Close