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Information × Registration Number 0216U000730, 0115U001123 , R & D reports Title Radio-sensors of physical quantities on the basis of reactive properties and negative resistance of semiconductor structures popup.stage_title Head Osadchuk Olexander Volodimirovych, Registration Date 22-02-2016 Organization Vinnitsa National Technical University popup.description2 The aim is to improve metrological parameters of radio sensors of physical quantities with a frequency output signal, such as noise immunity, sensitivity, precision measurement technology joint with the microelectronic element base. The research object is the process of converting the signal proportional to the pressure, humidity, gas concentration and temperature into a frequency signal, which allows to solve the problem of development of radio sensors of physical quantities with improved metrological performance. The research subject is the static and dynamic characteristics of radio frequency sensors of physical quantities on the basis of reactive properties and negative resistance semiconductor structures. The paper in the scientific aspect of the mathematical models of radio pressure sensors, humidity based on nonlinear equivalent circuits, it is possible to obtain a conversion function and sensitivity equation proposed instruments. The physical and mathematical model to describe the static and dynamic characteristics of microelectronic sensors, pressure and humidity. The analysis of the physical processes that occur in bipolar and field-effect transistor structures with negative resistance in the action of pressure and humidity. Spend the development of elements of the theory tenzoreaktivnogo field effect and bipolar semiconductor structures, which form the basis of mathematical models of the proposed frequency pressure sensors. Spend the development of elements of the theory vlagoreaktivnogo field effect and bipolar semiconductor structures, which form the basis of mathematical models of the proposed frequency moisture sensors. A model study tensor and vlagoreaktivnogo effects in the field, bipolar and bipolar field-effect transistor structures with negative resistance using the software package Matlab 7.11 with Pspice models of bipolar and field-effect transistors. The obtained results of model studies have high convergence with the results obtained using the developed mathematical models of radio sensors, pressure and humidity. Product Description popup.authors Звягін Олександр Сергійович Криночкін Роман Володимирович Осадчук Володимир Степанович Осадчук Олександр Володимирович Осадчук Ярослав Олександрович Савицький Антон Юрійович Семенов Андрій Олександрович Червак Оксана Петрівна popup.nrat_date 2020-04-02 Close