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Information × Registration Number 0216U003024, 0115U001417 , R & D reports Title Forming new optical and electronic properties of the nanostructures under high pressure and laser radiation with rare earth ions as probes. popup.stage_title Head Pashkevich Yurii G., Доктор фізико-математичних наук Registration Date 11-01-2016 Organization Dоnetsk Institute for Physics and Engineering named after O.O.Galkin of the NAS of Ukraine popup.description2 Series of samples of nanostructured carbon-nitrogen films have been synthesized by reactive magnetron sputtering. The phase diagram of the carbon nitride nanostructure grown by magnetron sputtering depending on various parameters of the synthesis has been built. The existence of diamond and nanokolonar phase films and the optimal growth parameters of these phases. A new method for the synthesis of diamond-like phase of carbon materials has been suggested. The method uses nanokolonar or fullerene-like carbon nitride as starting components which are simultaneously subjected to high pressure, temperature and laser irradiation in the optical pressure chamber. It was established that under pressure and under the influence of laser irradiation the electronic metal-insulator transition onsets in the starting films. Hybrid nanostructured carbon nitride films doped with rare earth element europium have been grown. Based on the analysis of the luminescence spectra the effect of different modes of growth on the structure of the films has been studied. Density functional theory method has been used to study structural, electronic and magnetic properties of carbon nanotubes of "chair" type that encapsulated chain of iron atoms of the "zigzag" type. Product Description popup.authors Вягін О.Г. Гнєзділов В.П. Лінник О.І. Ламонова К.В. Прудніков А.М. Шевцова Т.М. popup.nrat_date 2020-04-02 Close
R & D report
Head: Pashkevich Yurii G.. Forming new optical and electronic properties of the nanostructures under high pressure and laser radiation with rare earth ions as probes.. (popup.stage: ). Dоnetsk Institute for Physics and Engineering named after O.O.Galkin of the NAS of Ukraine. № 0216U003024
1 documents found

Updated: 2026-03-26