Search academic texts

Information × Registration Number 0216U005524, 0113U000612 , R & D reports Title Influence of the ionization of impurity delta-layer inside quantum well on the binding energy of the same impurity. popup.stage_title Head Tulupenko Viktor M., Registration Date 02-02-2016 Organization Donbass State Engineering Academy popup.description2 The object of research is SiGe/Si quantum wells (QW) delta-doped with phosphorus at the center and at the edge of the well. The subject of research is the calculation of the absorption coefficient and changes of the refraction index as well as the contributions of the linear and nonlinear effects to optical properties of the structure. Methods are self-consistent solution of Schr?dinger and Poisson equations to obtain the energy spectrum of the structure. Results are new scientific knowledge about the influence of the degree of an ionization of the impurity delta-layer to optical properties delta-doped QWs. Scientific novelty is the possibility of the adjustment of the optical characteristics of QWs by the ionization of the impurity delta-layer inside the QW. Application is THz modulator on the base of delta-doped QWs. Product Description popup.authors Акімов Володимир Ігорович Білих Валерій Георгійович Демедюк Роман Олександрович Дмитриченко Тетяна Вікторівна Рижков Павло Віталієвич Тулупенко Віктор Миколайович Фоміна Оксана Сергіївна popup.nrat_date 2020-04-02 Close