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Information × Registration Number 0216U006356, 0115U000429 , R & D reports Title Sensors microelectronic devices based on radiation-resistance semiconductor nanomaterials for fusion reactors, particle accelerators, spacecraft popup.stage_title Head Bolshakova Inessa, Доктор технічних наук Registration Date 13-01-2017 Organization Lviv Polytechnic National University popup.description2 The task of research is: (i) developing ways of improving the accuracy of equipment for mapping the magnetic field, (ii) the development and manufacture of new designs of magnetic probes, (iii) testing the sensors in nuclear reactors, (iiii) Investigation the electrical parameters of the Hall sensors in high magnetic fields and low temperatures, (iiiii) the creation of methods to increase radiation resistance indium-inclusive semiconductor materials group AIII BV through radiation modification (iiiiii) design and samples of three-axis probes and precision magneto-measuring devices for mapping of magnetic fields. During the execution of research design was developed planar and axial probes for mapping magnetic fields in terms of fusion reactors, particle accelerators, and space satelites. Developed technical documentation. Developed and implemented methods for precision positioning sensors and structural elements of magneto-measuring probes using optical laser technology. Developed and implemented methods for improving the accuracy of measurement of the magnetic field by reducing parasitic sensor signals caused by planar effects and off-set voltage. The research sensor signals in high magnetic fields up-to 14 T and at low temperatures 4,2 K in Laboratory of high magnetic fields and low temperatures (Wroclaw, Poland). The analysis of the impact of ionizing radiation on the radiation resistance of semiconductor materials and determining the physical basis of predicting properties of semiconductor materials exposed to radiation technology development modifications. The possibility of practical implementation of technology change settings indium-inclusive semiconductor material by controlled introduction of radiation defects. The cary out research and designed the technology of radiation modification heterostructure InSb / i-GaAs and InAs / i-GaAs, which provides stability parameters of Hall sensors based on them, in radiation conditions. The technology of radiation modification based on processes laid radiation sensors based on InSb and InAs certain reactor neutron spectrum. The defined technological modes of process modifications radiation sensors based on heterostructure InSb / i-GaAs and InAs / i-GaAs, namely: the optimal ratio of thermal and fast neutrons in the flow and optimum process temperature exposure. The cary out research a series of studies of radiation resistance of materials AIII BV and sensors based on them to high neutron fluence 1019n · cm-2 at the different energy spectra of neutrons in a reactor IBR-2 (JINR) and BD-m (PNPI). Developed and manufactured experimental models of magneto-measuring devices based on three-axis Hall probes, designed to work in a cryogenic temperatures and reactor neutron irradiation.5481 Product Description popup.authors Афанасьєв Д.М. Большакова І.А. Васильєв О.В. Гумен С.С. Ковальова Н.В. Кость Я.Я. Макідо О.Ю. Мороз А.П. Одінцов О.В. Палиняк І.В. Пилявець І.В. Цуканова Л.М. Шуригін Ф.М. Юстус В.Ф. popup.nrat_date 2020-04-02 Close