Search academic texts

Registration Number

0217U000082, 0112U000895 , R & D reports

Title

Research heternyh properties of radiation defects in semiconductors

popup.stage_title

Head

Litovchenko Piotr G.,

Registration Date

17-01-2017

Organization

Institute for Nuclear Research of National Academy of Sciences of Ukraine

popup.description2

Object of study - a highresistivity single crystal silicon doped with izovalent impurities irradiated by nuclear particles. Purpose - study changes of electrophsical and structural properties of semiconductors in the fields of nuclear radiation, determine the possibilities of using hettering properties oxygen-silicon precipitates in neutron-irradiated silicon. Research methods - research of radiation defects formation in silicon with different concentration of impurities. Research results: The features of radiation defects formation and radiation resistance at n-Si samples with low and high concentrations of oxygen (from 5*1015 to 7*1017 cm -3) that were irradiated fast neutrons reactor WWR-M were investigated. It was shown that the fluence of fast neutrons, in which electron density tends to own, doesn't depend on oxygen concentration. It was experimentally obtained dose and temperature dependence of the effective carrier concentration. Theoretical calculations were performed within the specified Gossic's model taking into account not only recharge defects in the matrix of n-Si conduction, but also in the space charge regions of clusters. It was concluded that consideration of the additional overlapping in space charge regions of clusters is needed due to the introduction of point defects. The model for explanation of the n p conversion of dose dependence in n-Si samples with low and high oxygen concentration was proposed. It was assumed that the spatial separation of divacancies' and diinterstitials' clusters in silicon atoms is responsible for the position of the Fermi level near the middle of the bandgap at high fluences. It was investigated high-resistance p - Si (p0 = 1,63*1011 cm-3) and n - Si (n0 = 1,19*1014 cm-3) samples grown by float zone melting after irradiation by reactor fast neutrons at 320°C as well as before and after isothermal or isochronous annealing. Energy levels of divacancy in three charge states depending on its configuration were determined. The energy level values of divacancy and A - center are shown after their modification with background impurities. It was established that the increase in holes' concentration in the valence band of silicon is due to acceptor level formation which belongs to hexavacancy.

Product Description

popup.authors

Барабаш Людмила Іванівна
Бердниченко Світлана Василівна
Варніна Валентина Іванівна
Васильківський Анатолій Степанович
Воробйов Володимир Герасимович
Гайдар Галина Петрівна
Долголенко Олександр Петрович
Конорева Оксана Володимирівна
Кочкін Василій Іванович
Ластовецький Володимир Францевич
Макуха Олександр Миколайович
Марченко Лариса Сергіївна
Пінковська Мирослава Богданівна
Петренко Ігор Віталійович
Полівцев Леонід Анлрійович
Старчик Маргарита Іванівна
Тартачник Володимир Петрович
Шматко Галина Григорівна

popup.nrat_date

2020-04-02