1 documents found
Information × Registration Number 0217U000084, 0112U000895 , R & D reports Title Research heternyh properties of radiation defects in semiconductors popup.stage_title Head Litovchenko Piotr G., Registration Date 17-01-2017 Organization Institute for Nuclear Research of National Academy of Sciences of Ukraine popup.description2 Object of study - high-resistivity single crystal silicon and Si by doped isovalent impurities and irradiated by nuclear particles. Purpose - study of changes electrophysical and structural properties of semiconductors in the fields of nuclear radiation, investigation the influence of growth defects and impurities on the long-range effects of high-energy light ions in behind path ions of crystal region. Research results: The irradiation of single-crystal silicon by high-energy protons and alpha particles detected radiation influence and distribution of defect structure in behind path ions of samples ("long-range effects"), which nonprovided by the existing theory of ion implantation. Radiation effects in proton irradiation manifested in the accelerate creation of growth termodefecty layers in silicon, which in behind path of the sample was more intense and observed temperature annealing at 50 ° lower than in path ions. Calculated temperature dependence of kinetic coefficients measured at dark and when IR - illumination at the edge of the absorption of Ge-and Si-filters, and described the behavior mobility of electrons in high resistivity silicon grown by float zone melting after irradiation by fast neutrons reactor. Within specify-model of defect clusters calculated temperature dependence of the concentration of electron and electrons drift barriers in their diffuse movement in samples of silicon. Proved that the divacancy defects in clusters are in more distorted configuration. Product Description popup.authors Бердниченко Світлана Василівна Варніна Валентина Іванівна Васильківський Анатолій Степанович Воробйов Володимир Герасимович Гайдар Галина Петрівна Долголенко Олександр Петрович Конорева Оксана Володимирівна Кочкін Василій Іванович Ластовецький Володимир Францевич Макуха Олександр Миколайович Малий Євгеній Вікторович Марченко Лариса Сергіївна Пінковська Мирослава Богданівна Петренко Ігор Віталійович Полівцев Леонід Анлрійович Старчик Маргарита Іванівна Тартачник Володимир Петрович Шматко Галина Григорівна popup.nrat_date 2020-04-02 Close
R & D report
Head: Litovchenko Piotr G.. Research heternyh properties of radiation defects in semiconductors. (popup.stage: ). Institute for Nuclear Research of National Academy of Sciences of Ukraine. № 0217U000084
1 documents found

Updated: 2026-03-27