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Information × Registration Number 0217U000114, 0116U003883 , R & D reports Title Оptical and electrical properties of semiconductor nanoheterosystems popup.stage_title Head Boichuk Vasyl Ivanovych, Registration Date 19-01-2017 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 We obtain a general formula for the coefficient of light subzone absorption direct electronic transitions in the superlattice 3D-spherical GaAs quantum dots in matrix AlxGa1-xAs. The dipole approximation allowed electronic transitions between 1s- and 1pz-subzones. Calculations showed, light absorption coefficient is calculated depending on the frequency and polarization of the incident light energy, Fermi level, temperature and concentration of aluminum in the matrix. Product Description popup.authors Білинський Ігор Васильович Бойчук Василь Іванович Вороняк Ярослав Михайлович Гольський Віталій Богданович Лешко Роман Ярославович Столярчук Ігор Дмитрович Шаклеіна Ірина Олександрівна Шевчук Інна Сергіївна popup.nrat_date 2020-04-02 Close