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Information × Registration Number 0217U001257, 0116U000809 , R & D reports Title Active solid state elements for generating, frequency multiplication and radiation of electromagnetic waves in the terahertz range popup.stage_title Head Arkusha Yury Vasilievich, Botsula Oleg Viktorovich, Registration Date 02-02-2017 Organization Kharkov National University named after V.N. Karazin popup.description2 The objects of study are impact ionization, tunneling and intervalley transfer electrons effects what lead to the generation of electromagnetic waves in terahertz bands or obtaining it by multiplying the frequency. The processes of formation of electromagnetic fields by help of the semiconductor structures is considered to. Purpose of research is searching new and improvement of existing active elements for generating, multiplying the frequency and radiation in the terahertz range. The methods of investigation is mathematical modeling of physical processes in semiconductor structures with transfer electron effect (TEE), impact ionization and nanoscale semiconductor structures on binary and ternary A3B5 based compounds, including nitride semiconductor by using of Monte – Carlo, kinetic Boltzmann’s equation averaging method and solution of Maxwell's equations in the time domain. This research is carry out for creating the new semiconductor devices for generating and radiation elements in the said wavelengths range. The novelty of the work are developing and modification of existing methods of modeling of semiconductor devices and their application to complex structures operating in the terahertz range and discovery of new physical phenomena and properties. In the work the mathematical model of the physical processes in devices with resonant tunnel boundaries based on А3В5 semiconductors is improved using Monte Carlo method. To analyze the dynamics of the emergence of current instabilities in graded gap semiconductors the mathematical model and effective numerical algorithm have been created. The mathematical model for the studying of short diodes with TEE in sandwich and planar form in temperature range has been developed. The peculiarity of impact ionization in short diodes and energy distribution of carriers have been investigated. The mathematical model for analyzing terahertz range electromagnetic waves radiation by the semiconductor active elements has been developed Product Description popup.authors І. Стороженко В. Зозуля К. Приходько Л. Головко Л. Ткачук М. Полянський О. Боцула О. Бутрим О. Ярошенко popup.nrat_date 2020-04-02 Close