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Information × Registration Number 0217U001627, 0112U004481 , R & D reports Title Effect of inhomogeneous defect formation and phase stratification on physical properties of the irradiated materials popup.stage_title Head Golinei Igor, Registration Date 13-03-2017 Organization Scientific Center "Institute for Nuclear Research" of National Academy of Sciences of Ukraine popup.description2 Single crystal silicon was irradiated with He ions with energies close to 27.2 eV and fluences exceeding 5х1016 ions per см2. The purpose was to obtain information on the nature and determination parameters of the defect structure as well as measuring the optical properties of the irradiated silicon. The Chochralsky grown Si was used (<111>, p-type, specific resistence10 Ом•см). The fluences were from 10^16 to 10^17 ions per sm2, the intensity (current density) varied from 0.25 to mA. Irradiation was performed at the U-120 cyclotron of the Institute for Nuclear Research of NAS of Ukraine. The inter-exciton interaction in the track in the semiconductors where excitons are of large radius was evaluated. It was concluded that the exciton density sufficient for the creation of the electron-hole droplets may appear in the case of either multiply charged fast particles or in the case of light particles, for example, muons. Product Description popup.authors Єрмольчик Володимир Олександрович Варніна Валентина Іванівна Марченко Лариса Сергіївна Петренко Ігор Віталійович Старчик Маргарита Іванівна Сугаков Володими Йосипович Шматко Галина Григорівна popup.nrat_date 2020-04-02 Close