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Information × Registration Number 0217U001628, 0112U004481 , R & D reports Title Effect of inhomogeneous defect formation and phase stratification on physical properties of the irradiated materials popup.stage_title Head Golinei Igor, Registration Date 13-03-2017 Organization Scientific Center "Institute for Nuclear Research" of National Academy of Sciences of Ukraine popup.description2 Structural and optical properties of the single crystal silicon irradiated with He ions with energies about 27.2 eV at fluences of 5х1016 ions per sm^2 have been studied. X-ray topography of the irradiated sample after polishing and etching revealed significant structural damage at the depth of stopping power (approximately 360 nm), In the microphotos of the silicon surface, scanning electron microscopy of two samples irradiated to 1017 ions per sm2 at the current density in the range from 0.25 to 0.45 mА, one can see lines of stressed regions at the depth of the stopping power, several additional lines closer to the surface and one line in the region beyond the stopping power. Theoretically, the dependence of the position of the dip in the temperature dependence of the radiational creep on the density of diclocations and other sinks has been studied.5481 Product Description popup.authors Єрмольчик Володимир Олександрович Варніна Валентина Іванівна Марченко Лариса Сергіївна Петренко Ігор Віталійович Старчик Маргарита Іванівна Сугаков Володими Йосипович Шматко Галина Григорівна popup.nrat_date 2020-04-02 Close