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Information × Registration Number 0217U001973, 0117U002880 , R & D reports Title Doped composite oxide materials for photonic applications popup.stage_title Head Markevich Iryna Vasylivna, Registration Date 26-10-2017 Organization Institute of Semiconductor Physics popup.description2 The object of the study - ZnMgO films produced by screen printing and solid-phase reaction; ZnMgO ceramics, fabricated by the method of high-temperature solid-phase reaction. The goal of the work is to establish technological annealing regimes that influence the structural and optical properties of ZnMgO films in order to control their luminescence spectrum. Research methods - photoluminescence, Raman scattering, X-ray diffraction. It is found that formation of the hexagonal phase of ZnMgO begins at 700 ° C and reaches the composition Zn0.85Mg0.15O at 1000 ° C. However, after the high-temperature solid phase synthesis of ZnMgO the samples contain some areas of zinc oxide. It is found that the addition of propylene glycol (C3H8O2) as a flux can improve the adhesion of ZnMgO films to Si and Al2O3 substrates. It is found that the intensity of the exciton and defect luminescence of ZnMgO recorded from the surface of the films and ceramics is lower in order of value than those in the bulk of the samples. It is shown that thermal annealing in zinc vapors results in the increase in 10-100 times of the intensity of defect luminescence of ZnMgO and increase in 10 times of the intensity of the exciton luminescence of ZnMgO recorded from the surface of the samples. Projected assumptions about the development of the research object are the improvement of the methods of fabrication of the films and ceramics of zinc-magnesium oxide with a high intensity of defect luminescence, which can be used for the production of light-emitting devices of visible spectral range. Product Description popup.authors Борковська Людмила Володимирівна Стара Тетяна Русланівна Хоменкова Лариса Юріївна popup.nrat_date 2020-04-02 Close
R & D report
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Head: Markevich Iryna Vasylivna. Doped composite oxide materials for photonic applications. (popup.stage: ). Institute of Semiconductor Physics. № 0217U001973
1 documents found

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