Search academic texts

Information × Registration Number 0217U002972, 0115U003173 , R & D reports Title The influence of complex physic-chemical processing at the liquid and solid states on formation of structure and properties of semiconductor silicon popup.stage_title Head Kutsova Valentina Zinov'evna, Registration Date 28-12-2017 Organization National Metallurgical Academy of Ukraine popup.description2 The influence of doping on the structure and properties of semiconducting silicon is studied. The binding energy and the charge density of silicon by micronutrition with transition metals, as well as elements in which there is a change in the type of bond from covalent to metal, occurs during heating were calculated by using the method of physics-chemical modeling. The influence of alloying elements on the temperature intervals of the phase transformations in semiconducting silicon (Cz-Si) has been determined. The structure, phase composition, properties and distribution of elements between phases and structural components in doped silicon in the initial state, and also doped Cz-Si after a complete cycle of heating-cooling in a chamber of a dilatometer were investigated. The influence of alloying elements on electro-physical properties of semiconducting silicon has been determined. The rational modes of thermal treatment of doped semiconductor silicon have been developed. The heat treatment influence on the structure and properties of doped semiconductor silicon and magnetic processing on the structure formation and properties of doped semiconductor silicon were investigated. The influence of permanent magnetic field processing on the structure, microhardness and electro-physical properties of doped semiconductor silicon are investigated. The influence of structural - phase and stress states, physical and mechanical properties and dispersion of components on the electro-physical and micromechanical properties of semiconducting silicon have been determined. The fundamental mechanism of physical and chemical influence on the structure formation and properties of semiconducting silicon is proposed for the purpose of controlled acquisition of devices with given characteristics based of the obtained data. The newest comprehensive technology for the production of semiconductor silicon, which includes doping with transition metals and rare earth metals, heat treatment at temperatures of phase transformations or processing in a magnetic field at room temperature, which provides an enhanced complex of mechanical and physical properties of Cz-Si for products of instrumentation. A pilot-industrial test of the batch of semiconducting silicon (Cz-Si) in the initial and doped aluminum, copper, hafnium, zirconium states after annealing at a temperature of 350-450 ° C and after magnetic processing at room temperature for 240 or 720 hours provide to the increase the thermal stability silicon, improvement of the complex of mechanical and physical properties. Using alloyed Cz-Si after processing in magnetic field for production instrumentation products for the machine-building, rocket and space industries and for the manufacture of solar cells provides to the savings by eliminating from the process of obtaining alloyed Cz-Si thermal treatment and replacing it by processing in a magnetic field at the normal temperature. The alloying and magnetic processing of the Cz-Si provides to the durability and thermal stability of appliances and solar cells. Product Description popup.authors І.В. Ігнатенко І.В. Ратнікова І.Л. Шинковська А.В. Гребенєва А.О. Купчинська А.Ф. Олексієнко А.Ю. Пройдак Л.Ф. Сушко М.А. Ковзель О.А. Носко О.О. Величко О.О. Ратніков С.О. Каратаєв Т.В. Котова popup.nrat_date 2020-04-02 Close