Search academic texts

Registration Number

0217U003083, 0112U005082 , R & D reports

Title

Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis

popup.stage_title

Head

Gaidar Galyna Petrivna,

Registration Date

17-01-2017

Organization

Scientific Center "Institute for Nuclear Research" of National Academy of Sciences of Ukraine

popup.description2

The influence of gamma-irradiation on the concentration and mobility of majority charge carriers in germanium and silicon is investigated. In the oxygen-containing samples of n-Ge and n-Si, and in the compensated crystals of n-Si, the mobility is shown to grow anomalously with irradiation dose in the region of combined scattering. A model is proposed which is based on the partial neutralization of scattering center charges by those of the radiation defects produced by irradiation mainly around the scattering centers. This model qualitatively accounts for the data obtained experimentally. The changes of temperature dependences of charge carrier mobility in n-Si single crystals, grown by the Czochralski method, which were annealed and cooled under various conditions, have been investigated. The crystals with resistivities 0.3 and 4.4 Ohm cm were annealed at 1200 and 500 ^oC during 2 hours. The annealing was accompanied by fast or slow cooling. It was shown that mobility of free carriers in the case of impurity scattering is determined not only by thermal-annealing conditions but the rate of cooling. It was found that the introduction of the germanium impurity in n-Si, grown by the Czochralski method, increases its radiation hardness of about an order of magnitude. It was assumed that germanium in silicon is a recombination center for the Frenkel pairs, which suppresses the introduction of deep defects of the vacancy type. In p-silicon samples doped with boron impurity р-n conversion occurs under introduction of isovalent germanium impurity into the silicon crystals and the long thermal annealing (up to 300 hours) at 450 ^оС. The substantial decrease in the effectiveness of the formation of thermodonors in the experiments with the convertible samples due to the doping of silicon crystals by the germanium impurity was established.

Product Description

popup.authors

Анохін Ігор Євгенович
Барабаш Людмила Іванівна
Верцімаха Ганна Віталіївна
Гайдар Галина Петрівна
Зінець Олег Сергійович
Карпенко Андрій Якович
Ластовецький Володимир Францевич
Литовченко Петро Григорович
Полівцев Леонід Андрійович
Сугаков Володимир Йосипович
Тартачник Володимир Петрович

popup.nrat_date

2020-04-02