Search academic texts

Information × Registration Number 0217U004827, 0114U002481 , R & D reports Title Physical principles of modification technology of amorphous and crystalline silicon properties by fourth group elements doping and ionizing radiation. popup.stage_title Head Neimash V.B., Доктор фізико-математичних наук Registration Date 07-03-2017 Organization Institute of physics NASU popup.description2 Group IV elements: C, Sn and Pb effect on the silicon physical properties in the amorphous, amorphous-crystalline and monocrystalline state under the influence of radiation and heat treatments studied by optical, capacitive and Auger spectroscopy, electron and optical microscopy, XRF and EPR analysis, the Hall effect and nonequilibrium photoconductivity. The mechanisms of silicon transformation from amorphous into crystalline state due tin-induced crystallization as well as degradation of electrical and recombination characteristics of the monocrystalline tin, lead and carbon doped silicon, established from analysis of the obtained results. The physical principles of new manufacturing techniques and quality control of amorphous-crystalline nanocomposites for 3rd generation solar cells are developed based of these mechanisms. Technological manufacturing principle of radiation hard monocrystalline silicon is developed and patented. This will extend the lifetime 1st generation solar cells working in an outer space several times. Product Description popup.authors Боярчук Анатолій Петрович Войтович Василь Васильович Колосюк Андрій Григорович Красько Микола Миколайович Мельник Віктор Вікторович Неймаш Володимир Борисович Поварчук Василь Юрієвич Рогуцький Іван Станіславович Яроцький Василь Іванович popup.nrat_date 2020-04-02 Close