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Information × Registration Number 0217U006629, 0117U003911 , R & D reports Title Development of new technologies of solar converters formation using thin-film structures with variband layer, embedded metal plasmonic particles and electrostatically charged ferroelectric layer popup.stage_title Head Vladimir G. Litovchenko, Registration Date 15-12-2017 Organization Institute of Semiconductor Physics popup.description2 This stage of the Scientific Research Work involves comparative studies of photovoltaic and electrophysical properties of photovoltaic structures with formed porous layers of variable porosity with embedded metal particles and a certain electrostatic potential on the rear surface with similar properties of standard photovoltaic cells. The objects of the study are processes of anodic-chemical formation of a layer of porous silicon (PS) of n-type conductivity, structural, morphological properties, spectral characteristics of the photo-electromotive force (PEF) p-n structures of the solar cell (SC), metallic nanoparticles surrounded by PS, stimulated light processes of nanostructurization of the SiOx / Si system. The purpose of the work was to investigate the possibility of increasing the efficiency of Si-based photovoltaic structures due to: the creation of a graded band gap porous layer on the front surface, the implantation of metal nanoparticles into PS layer and the formation of a potential on the rear surface of electrically-charged electret layers with an electric charge to increase the shut-off potential on the rear SC surface. The research methods are the measurements of photovoltaic, optical, structural and morphological parameters of solar cells under the spectral conditions of AM 1.5. For researches,The set-up of photoelectrolytic PS formation, magnetron sputtering, laser solid state modification, ellipsometry, high resolution CEM (~ 2 nm) at the Institute of Semiconductor Physics, Center for Physical Sciences and Technology, Vilnius, Lithuania, and also certified by the National Science Center "Institute Metrology "(Kharkiv) Control and measuring equipment of the Center for testing of photoconductors and PV batteries at V.E. Lashkaryov ISP NAS of Ukraine . The possibility of photoelectrolytic formation of PS on the n-Si substrate in conditions of UV irradiation is shown. The ability to increase the efficiency of the SC, in particular, in the short-wave part of the SC spectrum with the PS layer on the frontal surface in comparison with the identical standard SC model without PS layer, is proved. It is determined that the observed growth can be due to the following factors: 1) - an increase in the bending of the zones in the near-surface area of the spatial charge as a result of the formation of the PS layer, 2) the thickening of the strongly doped n- + region, which is accompanied by a decrease in the rate of Auger recombination, and hence the growth of short-wave sensitivity. It is shown that metal nanoparticles embedded PS contribute to gettering of recombinantly-active impurities and increase the sensitivity of SC. The principle possibility of combining of the functions of enlightenment and passivation of the SC frontal surface with the formation of nanostructured layers of PS on it and the possibility of the microporous silicon using as an effective enlightenment material for silicon solar cells is established. Possibilities of drawing additional potential on the back surface of the SC charged electret layer, estimations of electret layer parameters and conclusions regarding the most suitable electret materials with high dielectric permeability were made. The principal possibility of laser-stimulated phase separation of SiOx films on monoatomic nanocrystals of Si, surrounded by an oxide SiO2 matrix, is shown. It is established that as a result of laser annealing there is an increase in the absorption capacity of SiOx film with a short-wave shift of a transmittance of from 1032 cm-1 to 1073 cm-1. The research results are original and will be useful for increasing the efficiency of the conversion of the SC based on Si. Product Description popup.authors Горбанюк Тетяна Іванівна Костильов Віталій Петрович Мусаєв Сергій Мусаєвич Федоренко Леонід Леонідович Чапський Сергій Юр'євич Черненко Володимир Васильович popup.nrat_date 2020-04-02 Close