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Information × Registration Number 0217U006689, 0117U003688 , R & D reports Title Development of new technological principles for the creation of planar composite nanostructures based on silicon oxide with reactive impedance of inductive type popup.stage_title Head Evtukh Anatoliy Antonovich, Registration Date 12-12-2017 Organization Institute of Semiconductor Physics popup.description2 The report is presented in one volume and is 65 pages, including figures 32, tables 4, used sources 49. Key words: silicon nanocrystals, metal inclusions, ion-plasma technology, nanocomposite films, nanoelectronics. Purpose of the project: Development of physical and technological principles and key technological procedures for the formation of planar hopeless semiconductor / SiO2 nanostructures with a reactive impedance of inductive type based on nanosized silicon oxide films containing nanoparticles of oxidized transition metals or silicon. As a result of this work, the ion-plasma technology for deposition of the silicon-enriched SiOx films and SiOx films containing metal inclusions was developed, and the structural and electrical characteristics of SiOx films and SiO2(Si), SiO2(Si, Me) nanocomposite films obtained as a result of thermal, and laser annealing have been investigated. It has been established that the use of ion-plasma sputtering technology in the O2 + Ar gas medium allows the production of thin films of SiOx. The change in the ratio of working gases O2 / Ar leads to a controlled change in the Si content of the initial SiOx film when it is obtained. The growth of oxygen content in the deposition atmosphere leads to a decrease in excess silicon in SiOx film and a corresponding increase in the stoichiometric index x and the shift of the position of the peak of the IR spectrum in the high frequency region. The basic parameters of the technological regime of ion-plasma sputtering have been optimized, namely: pressure in the chamber P = 5 ? 10-4 - 8 ? 10-4 mm. Hg, the temperature of the substrate T = 100-150 oС, the cathode's heating current Ic = 140-160 A, the voltage of the anode Va = 50-80 V, the current of the anode Ia = 10-12 A, the voltage at the target Vm = 1 to 3 kV, target current Im = 0,3-0,7 mA. The technology for obtaining of (Co50Fe50Zr10)x (SiO2)y films with 30 <x <60 at.% and a different degree of metal particles oxidation in SiO2 matrix has been developed. The complex investigations of the structural properties of nanocomposite SiO2 (Si) films obtained by the IPS technology using ellipsometry, IR and Raman spectroscopy, AFM microscopy, photoluminescence, etching, HRTEM have been performed, and the basic peculiarities of the transformation of silicon enriched SiOx films into nanocomposite SiO2(Si ) film containing Si NCs in the dielectric matrix after high-temperature and laser annealing have been obtained.5481 Product Description popup.authors Євтух Анатолій Антонович Кизяк Анатолій Юрійович Парфенюк Павло Васильович popup.nrat_date 2020-04-02 Close