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Information × Registration Number 0218U001946, 0118U004772 , R & D reports Title Development of the new technological principles of creation of planar composite nanostructures based of silicon oxide with reactive inductive impedance popup.stage_title Head Evtukh Anatoliy Antonovych, Registration Date 26-12-2018 Organization Institute of Semiconductor Physics popup.description2 The report is presented in one volume and contains 88 pages, including figures 60, tables 10, used sources 48, applications 1. Key words: silicon nanocrystals, metal inclusion, ion-plasma technology, nanocomposite films, nanoelectronics. Aim of the project: Development of physical and technological principles and key technological procedures for the formation of planar without coil semiconductor / SiO2 nanostructures with inductive type of reactive impedance on the basis of nanocomposite silicon oxide films containing nanoparticles of oxidized transition metals or silicon. As a result of this work, the ion-plasma technology of deposition of silicon-enriched SiOx films and SiOx films containing metal inclusions (Fe, Al) was developed, and the structural and electrical characteristics of SiOx films and SiO2 (Si), SiO2 (Si, Me) nanocomposite films obtained as the result of thermal annealing were studied. Planar without coil nanostructures based on SiOx(Fe) films with inductive type of the reactive impedance have been obtained. It has been established that the use of ion-plasma sputtering (IPS) technology in the O2 + Ar gas medium allows the production of thin SiOx films. The change in the ratio of working gases O2 / Ar leads to the controlled change in the Si content of the initial SiOx film when it is obtained. The growth of oxygen content in the deposition atmosphere leads to the reduction of excess silicon in SiOx film and the corresponding increase in the stoichiometry index x. The basic parameters of the technological regime of ion-plasma sputtering have been optimized. The complex investigations of the structural properties of silicon-enriched SiOx films and SiO2 (Si) nanocomposite films obtained by the IPS technology were carried out using ellipsometry, IR and Raman spectroscopy methods, AFM microscopy, photoluminescence, etching, HRTEM, and the basic regularities of transformation of silicon-enriched SiOx films into the nanocomposite film SiO2(Si) containing Si nanoclusters in dielectric matrix after high temperature annealing. The influence of thermal annealing on the conductivity of films during their transformation into nanocomposite SiO2(Si) film has been established. The introduction of metal impurities into SiOx and SiOxNy films leads to the increase in conductivity, especially in the region of small fields (<1 V). The influence of the annealing medium (nitrogen or argon) on the conductivity of SiOx and SiOxNy films containing metallic inclusions varies and depends on the applied voltage (field) and the temperature of the measurement. The conductivity of the SiOxNy (Al) film after annealing in nitrogen is less than after annealing in argon. Conversely, for an SiOx (Fe) film, the electrical conductivity after annealing in nitrogen is higher than after annealing in argon. The degree dependence of the composite SiOx films admittance on the frequency corresponded to the type of the Mott law for carrier hopping on alternating current. In composite films with metal inclusions, the frequency dependence of the conductivity on the frequency of the alternating current varies not significantly to ?20 KHz. Beginning with the frequency of more than ?20 KHz and up to ~ 1 MHz, the power dependence of conductivity is where m ~ 0.55 for aluminum metal inclusions and m ~ 0.49-0.52 for metallic iron inclusions have been observed. In the SiOxNy (Al) film structure, the capacitive component dominates, and in the SiOx (Fe) structure, the reactive component of the impedance has an inductive character to the frequency of ? 1 MHz, and then it becomes capacitive. The annealing of composite SiOx(Fe) films in air at temperatures of 773 - 873 K leads to the predominance in the reactive part of the admittance at low frequencies of the inductive input above the capacitive one. Based on the results of the study of the influence of annealing in the air on the frequency dependence of the admittance and the phase shift angle of composite SiOx(Fe) films, prototypes of the inductive elements were manufactured. Product Description popup.authors Євтух Анатолій Антонович Братусь Олег Леонідович Кизяк Анатолій Юрійович Семененко Микола Олександрович popup.nrat_date 2020-04-02 Close