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Information × Registration Number 0218U002327, 0116U001543 , R & D reports Title Electronic processes in silicon structures and the creation of inexpensive dual purpose sensors on their basis popup.stage_title Head Monastyrskii Liubomyr Stepanovych, Registration Date 14-02-2018 Organization Ivan Franko National University of Lviv popup.description2 On the basis of the developed model of the field effect in porous silicon it has been substantiated the peculiarities of the influence of the adsorption-electric effects on the electrical conductivity of nanostructured semiconductors. The dependence of the near surface conductivity on the surface charge magnitude is established. The main regularities of non-equilibrium electronic processes in sensory structures on the basis of porous silicon are studied and the influence of the gas environment on their electrical and photovoltaic parameters are investigated. On the basis of studying the influence of X-radiation on the electronic parameters of transistor thermosensors, a method for increasing their radiation resistance by means of previous low-dose radiation with the subsequent thermal annealing and time relaxation according is proposed. Product Description popup.authors Бойко Ярослав Васильович Гетьман Василь Богданович Кушлик Маркіан Олегович Монастирський Любомир Степанович Оленич Ігор Богданович Савула Ярема Григорович Соколовський Богдан Степанович Флюнт Орест Євгенович Яремик Роман Ярославович popup.nrat_date 2020-04-02 Close